Datasheet Texas Instruments SN54ACT240 — Datenblatt

Hersteller	Texas Instruments
Serie	SN54ACT240

Datenblätter

Preise

Status

Verpackung

Parameter

Parameters / Models	5962-8775901M2A	5962-8775901MRA	5962-8775901MSA	SNJ54ACT240FK	SNJ54ACT240J	SNJ54ACT240W
Bits	8	8	8	8	8	8
Input Type	TTL	TTL	TTL	TTL	TTL	TTL
Operating Temperature Range, C	-55 to 125	-55 to 125	-55 to 125	-55 to 125	-55 to 125	-55 to 125
Output Type	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Package Group	LCCC	CDIP	CFP	LCCC	CDIP	CFP
Package Size: mm2:W x L, PKG	20LCCC: 79 mm2: 8.89 x 8.89(LCCC)	See datasheet (CDIP)	See datasheet (CFP)	20LCCC: 79 mm2: 8.89 x 8.89(LCCC)	See datasheet (CDIP)	See datasheet (CFP)
Rating	Military	Military	Military	Military	Military	Military
Schmitt Trigger	No	No	No	No	No	No
Technology Family	ACT	ACT	ACT	ACT	ACT	ACT
VCC(Max), V	5.5	5.5	5.5	5.5	5.5	5.5
VCC(Min), V	4.5	4.5	4.5	4.5	4.5	4.5
Voltage(Nom), V	5	5	5	5	5	5

Öko-Plan

Anwendungshinweise

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  The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
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  PDF, 337 Kb, Datei veröffentlicht: Jul 8, 2004
  Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
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  PDF, 186 Kb, Revision: C, Datei veröffentlicht: Jun 1, 1997
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  CMOS Power Consumption and CPD Calculation (Rev. B)
  PDF, 89 Kb, Revision: B, Datei veröffentlicht: Jun 1, 1997
  Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
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  Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
  PDF, 43 Kb, Datei veröffentlicht: Apr 1, 1996
  Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

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• Semiconductors> Space & High Reliability> Logic Products> Buffers/Drivers/Transceivers> Buffer Drivers