Datasheet Texas Instruments LMG3410 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | LMG3410 |
600-V 12-A-Einkanal-GaN-Leistungsstufe
Datenblätter
LMG3410 600-V 12-A Single Channel GaN Power Stage datasheet
PDF, 630 Kb, Revision: B, Datei veröffentlicht: Mar 24, 2017
Auszug aus dem Dokument
Preise
Status
| XLMG3410RWHT | |
|---|---|
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| XLMG3410RWHT | |
|---|---|
| N | 1 |
| Pin | 32 |
| Package Type | RWH |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Width (mm) | 8 |
| Length (mm) | 8 |
| Thickness (mm) | .9 |
| Mechanical Data | Herunterladen |
Parameter
| Parameters / Models | XLMG3410RWHT |
|---|---|
| Configuration | Single-Channel Power Stage |
| Control Method | External |
| Coss, pF | 71 |
| ID(Max), A | 12 |
| Logic Level | 3V to 5V CMOS and TTL |
| Package Group | VQFN |
| Prop Delay, ns | 20 |
| RDS (on), Milliohm | 70 |
| Rating | Catalog |
| VCC, V | 12 |
| VDS(Max), V | 600 |
Öko-Plan
| XLMG3410RWHT | |
|---|---|
| RoHS | See ti.com |
Anwendungshinweise
- High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FETPDF, 694 Kb, Datei veröffentlicht: Feb 23, 2016
Modellreihe
Serie: LMG3410 (1)
Herstellerklassifikation
- Semiconductors> Power Management> Gallium Nitride (GaN)В Solutions> GaN FET Modules