Datasheet Texas Instruments XLMG3410RWHT — Datenblatt
Hersteller | Texas Instruments |
Serie | LMG3410 |
Artikelnummer | XLMG3410RWHT |
600 V 12-A Einkanal-GaN-Leistungsstufe 32-VQFN -40 bis 125
Datenblätter
LMG3410 600-V 12-A Single Channel GaN Power Stage datasheet
PDF, 630 Kb, Revision: B, Datei veröffentlicht: Mar 24, 2017
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 32 |
Package Type | RWH |
Package QTY | 250 |
Carrier | SMALL T&R |
Width (mm) | 8 |
Length (mm) | 8 |
Thickness (mm) | .9 |
Mechanical Data | Herunterladen |
Parameter
Configuration | Single-Channel Power Stage |
Control Method | External |
Coss | 71 pF |
ID(Max) | 12 A |
Logic Level | 3V to 5V CMOS and TTL |
Package Group | VQFN |
Prop Delay | 20 ns |
RDS (on) | 70 Milliohm |
Rating | Catalog |
VCC | 12 V |
VDS(Max) | 600 V |
Öko-Plan
RoHS | See ti.com |
Design Kits und Evaluierungsmodule
- Evaluation Modules & Boards: LMG3410-HB-EVM
LMG3410 Daughter Card
Lifecycle Status: Active (Recommended for new designs) - Evaluation Modules & Boards: LMG34XX-BB-EVM
LMG34xx GaN System-level Evaluation Mother Board
Lifecycle Status: Active (Recommended for new designs)
Anwendungshinweise
- High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FETPDF, 694 Kb, Datei veröffentlicht: Feb 23, 2016
Modellreihe
Serie: LMG3410 (1)
- XLMG3410RWHT
Herstellerklassifikation
- Semiconductors > Power Management > Gallium Nitride (GaN)В Solutions > GaN FET Modules