Datasheet Texas Instruments LM248 — Datenblatt

Hersteller	Texas Instruments
Serie	LM248

Datenblätter

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Status

Verpackung

Parameter

Parameters / Models	LM248D	LM248DG4	LM248DR	LM248DRE4	LM248DRG4	LM248N
Additional Features	N/A	N/A	N/A	N/A	N/A	N/A
Architecture	Bipolar	Bipolar	Bipolar	Bipolar	Bipolar	Bipolar
CMRR(Min), dB	70	70	70	70	70	70
CMRR(Typ), dB	90	90	90	90	90	90
GBW(Typ), MHz	1	1	1	1	1	1
Input Bias Current(Max), pA	200000	200000	200000	200000	200000	200000
Iq per channel(Max), mA	1.125	1.125	1.125	1.125	1.125	1.125
Iq per channel(Typ), mA	0.6	0.6	0.6	0.6	0.6	0.6
Number of Channels	4	4	4	4	4	4
Offset Drift(Typ), uV/C	15	15	15	15	15	15
Operating Temperature Range, C	-25 to 85	-25 to 85	-25 to 85	-25 to 85	-25 to 85	-25 to 85
Output Current(Typ), mA	25	25	25	25	25	25
Package Group	SOIC	SOIC	SOIC	SOIC	SOIC	PDIP
Package Size: mm2:W x L, PKG	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	See datasheet (PDIP)
Rail-to-Rail	No	No	No	No	No	No
Rating	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog
Slew Rate(Typ), V/us	0.5	0.5	0.5	0.5	0.5	0.5
Total Supply Voltage(Max), +5V=5, +/-5V=10	36	36	36	36	36	36
Total Supply Voltage(Min), +5V=5, +/-5V=10	8	8	8	8	8	8
Vn at 1kHz(Typ), nV/rtHz	60	60	60	60	60	60
Vos (Offset Voltage @ 25C)(Max), mV	6	6	6	6	6	6

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Herstellerklassifikation

• Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps