Datasheet Texas Instruments ISO5852S-Q1 — Datenblatt

HerstellerTexas Instruments
SerieISO5852S-Q1
Datasheet Texas Instruments ISO5852S-Q1

High-CMTI 2,5-A / 5-A-isolierter IGBT-MOSFET-Gate-Treiber mit geteilten Ausgängen und Schutzfunktionen

Datenblätter

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet
PDF, 1.7 Mb, Revision: A, Datei veröffentlicht: Dec 22, 2016
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Preise

Status

ISO5852SQDWQ1ISO5852SQDWRQ1
Lifecycle StatusActive (Recommended for new designs)Active (Recommended for new designs)
Manufacture's Sample AvailabilityYesNo

Verpackung

ISO5852SQDWQ1ISO5852SQDWRQ1
N12
Pin1616
Package TypeDWDW
Industry STD TermSOICSOIC
JEDEC CodeR-PDSO-GR-PDSO-G
Package QTY402000
CarrierTUBELARGE T&R
Device MarkingISO5852SQISO5852SQ
Width (mm)7.57.5
Length (mm)10.310.3
Thickness (mm)2.352.35
Pitch (mm)1.271.27
Max Height (mm)2.652.65
Mechanical DataHerunterladenHerunterladen

Parameter

Parameters / ModelsISO5852SQDWQ1
ISO5852SQDWQ1
ISO5852SQDWRQ1
ISO5852SQDWRQ1
DIN V VDE V 0884-10 Working Voltage, Vpk21212121
DIN V VDE V 0884-10 Transient Overvoltage Rating, Vpk80008000
Enable/Disable FunctionN/AN/A
Input VCC(Max), V5.55.5
Input VCC(Min), V2.252.25
Isolation Rating, Vrms57005700
Number of Channels11
Operating Temperature Range, C-40 to 125-40 to 125
Output VCC/VDD(Max), V3030
Output VCC/VDD(Min), V1515
Package GroupSOICSOIC
Package Size: mm2:W x L, PKG16SOIC: 106 mm2: 10.3 x 10.3(SOIC)16SOIC: 106 mm2: 10.3 x 10.3(SOIC)
Peak Output Current, A55
Power SwitchIGBTIGBT
Prop Delay, ns110110
Prop Delay(Max), ns110110

Öko-Plan

ISO5852SQDWQ1ISO5852SQDWRQ1
RoHSCompliantCompliant

Modellreihe

Serie: ISO5852S-Q1 (2)

Herstellerklassifikation

  • Semiconductors> Isolation> Isolated Gate Driver