Datasheet Texas Instruments ISO5852S-EP — Datenblatt

HerstellerTexas Instruments
SerieISO5852S-EP
Datasheet Texas Instruments ISO5852S-EP

High-CMTI 2,5-A / 5-A-isolierter IGBT-MOSFET-Gate-Treiber

Datenblätter

ISO5852S-EP High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet
PDF, 1.7 Mb, Datei veröffentlicht: Dec 23, 2016
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Preise

Status

ISO5852SMDWREPV62/16623-01XE
Lifecycle StatusActive (Recommended for new designs)Active (Recommended for new designs)
Manufacture's Sample AvailabilityYesYes

Verpackung

ISO5852SMDWREPV62/16623-01XE
N12
Pin1616
Package TypeDWDW
Industry STD TermSOICSOIC
JEDEC CodeR-PDSO-GR-PDSO-G
Package QTY20002000
CarrierLARGE T&RLARGE T&R
Device MarkingISO5852SMISO5852SM
Width (mm)7.57.5
Length (mm)10.310.3
Thickness (mm)2.352.35
Pitch (mm)1.271.27
Max Height (mm)2.652.65
Mechanical DataHerunterladenHerunterladen

Parameter

Parameters / ModelsISO5852SMDWREP
ISO5852SMDWREP
V62/16623-01XE
V62/16623-01XE
DIN V VDE V 0884-10 Working Voltage, Vpk21212121
DIN V VDE V 0884-10 Transient Overvoltage Rating, Vpk80008000
Input VCC(Max), V5.55.5
Input VCC(Min), V2.252.25
Isolation Rating, Vrms57005700
Number of Channels11
Operating Temperature Range, C-55 to 125-55 to 125
Output VCC/VDD(Max), V3030
Output VCC/VDD(Min), V1515
Package Size: mm2:W x L, PKG16SOIC: 106 mm2: 10.3 x 10.3(SOIC)16SOIC: 106 mm2: 10.3 x 10.3(SOIC)
Peak Output Current, A55
Power SwitchIGBT,SiCFETIGBT,SiCFET
Prop Delay(Max), ns110110
Prop Delay(Min), ns7676

Öko-Plan

ISO5852SMDWREPV62/16623-01XE
RoHSCompliantCompliant

Modellreihe

Serie: ISO5852S-EP (2)

Herstellerklassifikation

  • Semiconductors> Space & High Reliability> Power Management Products> Power Management Special Function Products