Datasheet Texas Instruments ISO5452QDWRQ1 — Datenblatt
Hersteller | Texas Instruments |
Serie | ISO5452-Q1 |
Artikelnummer | ISO5452QDWRQ1 |
High-CMTI 2,5-A / 5-A-isolierter IGBT-MOSFET-Gate-Treiber mit geteilten Ausgängen und Schutzfunktionen 16-SOIC -40 bis 125
Datenblätter
ISO5452-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet
PDF, 1.7 Mb, Revision: A, Datei veröffentlicht: Dec 22, 2016
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 16 |
Package Type | DW |
Industry STD Term | SOIC |
JEDEC Code | R-PDSO-G |
Package QTY | 2000 |
Carrier | LARGE T&R |
Device Marking | ISO5452Q |
Width (mm) | 7.5 |
Length (mm) | 10.3 |
Thickness (mm) | 2.35 |
Pitch (mm) | 1.27 |
Max Height (mm) | 2.65 |
Mechanical Data | Herunterladen |
Parameter
DIN V VDE V 0884-10 Working Voltage | 1420 Vpk |
DIN V VDE V 0884-10 Transient Overvoltage Rating | 8000 Vpk |
Enable/Disable Function | N/A |
Input VCC(Max) | 5.5 V |
Input VCC(Min) | 2.25 V |
Isolation Rating | 5700 Vrms |
Number of Channels | 1 |
Operating Temperature Range | -40 to 125 C |
Output VCC/VDD(Max) | 30 V |
Output VCC/VDD(Min) | 15 V |
Package Group | SOIC |
Package Size: mm2:W x L | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) PKG |
Peak Output Current | 5 A |
Power Switch | IGBT |
Prop Delay | 110 ns |
Prop Delay(Max) | 110 ns |
Öko-Plan
RoHS | Compliant |
Design Kits und Evaluierungsmodule
- Evaluation Modules & Boards: ISO5852SEVM
Reinforced Isolated IGBT Gate Driver Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
Modellreihe
Serie: ISO5452-Q1 (2)
- ISO5452QDWQ1 ISO5452QDWRQ1
Herstellerklassifikation
- Semiconductors > Isolation > Isolated Gate Driver