Datasheet Texas Instruments DRV425RTJT — Datenblatt

HerstellerTexas Instruments
SerieDRV425
ArtikelnummerDRV425RTJT
Datasheet Texas Instruments DRV425RTJT

Integrierter Fluxgate-Magnetsensor-IC für Open-Loop-Anwendungen 20-QFN -40 bis 125

Datenblätter

DRV425 Fluxgate Magnetic-Field Sensor datasheet
PDF, 764 Kb, Revision: A, Datei veröffentlicht: Mar 10, 2016
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Verpackung

Pin2020
Package TypeRTJRTJ
Industry STD TermWQFNWQFN
JEDEC CodeS-PQFP-NS-PQFP-N
Package QTY250250
CarrierSMALL T&RSMALL T&R
Device Marking----->DRV425
Width (mm)44
Length (mm)44
Thickness (mm).73.73
Pitch (mm).5.5
Max Height (mm).8.8
Mechanical DataHerunterladenHerunterladen

Parameter

ArchitectureOpen Loop
Current Sensor TypeFluxgate Integrated
Gain Drift(Typ)1 ppm/C
Gain Error (+/-)(Max)0.3 %
Offset Drift(Max)2 uV/C
Offset Voltage (+/-)75 uV
Operating Temperature Range-40 to 125 C
Package GroupQFN
Package Size: mm2:W x L20QFN: 16 mm2: 4 x 4(QFN) PKG
RatingCatalog
Reference Accuracy (+/-)(Max)2 %
Reference Drift(Max)(50 В±
Reference Voltage1.65 / 2.5 / Ratiometric V
System Bandwidth47 KHz
Vs(Max)5.5 V
Vs(Min)3 V

Öko-Plan

RoHSCompliant

Design Kits und Evaluierungsmodule

  • Evaluation Modules & Boards: DRV425EVM
    DRV425 Open Loop Magnetic Field Sensing Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)
  • Evaluation Modules & Boards: DRV425-BUSBAR-EVM
    В±100A Bus Bar Current Sensor using Open-Loop Fluxgate Sensors Reference Design Evaluation Assembly
    Lifecycle Status: Active (Recommended for new designs)

Anwendungshinweise

  • Bus Bar Theory of Operation
    PDF, 371 Kb, Datei veröffentlicht: Nov 8, 2016
  • Design Considerations for Dual DRV425 Bus Bar Application
    PDF, 104 Kb, Datei veröffentlicht: Mar 30, 2017

Modellreihe

Serie: DRV425 (2)

Herstellerklassifikation

  • Semiconductors > Sensing Products > Magnetic Sensors > Fluxgate Sensors