Datasheet Texas Instruments CSD87312Q3E — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD87312Q3E |
Zwei 30-V-N-Kanal-NexFET-Leistungs-MOSFETs
Datenblätter
Dual 30-V N-Channel NexFet Power MOSFET, CSD87312Q3E datasheet
PDF, 783 Kb, Datei veröffentlicht: Nov 19, 2011
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Preise
Status
| CSD87312Q3E | CSD87312Q3E-ASY | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Preview (Device has been announced but is not in production. Samples may or may not be available) |
| Manufacture's Sample Availability | Yes | No |
Verpackung
| CSD87312Q3E | CSD87312Q3E-ASY | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DPB | DPB |
| Package QTY | 2500 | |
| Carrier | LARGE T&R | |
| Device Marking | 87312E | |
| Width (mm) | 3.3 | 3.3 |
| Length (mm) | 3.3 | 3.3 |
| Thickness (mm) | .9 | .9 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD87312Q3E | CSD87312Q3E-ASY |
|---|---|---|
| Approx. Price (US$) | 0.35 | 1ku | |
| Configuration | Dual Common Source | Dual Common Source |
| ID, Silicon limited at Tc=25degC, A | 27 | |
| IDM, Max Pulsed Drain Current(Max), A | 45 | |
| IDM, Max Pulsed Drain Current(Max)(A) | 45 | |
| Package, mm | SON3x3 | |
| Package (mm) | SON3x3 | |
| QG Typ, nC | 6.3 | |
| QG Typ(nC) | 6.3 | |
| QGD Typ, nC | 0.7 | |
| QGD Typ(nC) | 0.7 | |
| RDS(on) Typ at VGS=4.5V, mOhm | 31 | |
| RDS(on) Typ at VGS=4.5V(mOhm) | 31 | |
| Rds(on) Max at VGS=4.5V, mOhms | 38 | |
| Rds(on) Max at VGS=4.5V(mOhms) | 38 | |
| VDS, V | 30 | |
| VDS(V) | 30 | |
| VGS, V | 10 | |
| VGS(V) | 10 | |
| VGSTH Typ, V | 1 | |
| VGSTH Typ(V) | 1 |
Öko-Plan
| CSD87312Q3E | CSD87312Q3E-ASY | |
|---|---|---|
| RoHS | Compliant | Not Compliant |
| Pb Free | Yes | No |
Modellreihe
Serie: CSD87312Q3E (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor