Datasheet Texas Instruments CSD19538Q3A — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19538Q3A |
100 V N-Kanal-NexFET-Leistungs-MOSFET
Datenblätter
CSD19538Q3A 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 352 Kb, Revision: A, Datei veröffentlicht: Mar 20, 2017
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Status
| CSD19538Q3A | CSD19538Q3AT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
Verpackung
| CSD19538Q3A | CSD19538Q3AT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DNH | DNH |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 19538 | 19538 |
| Width (mm) | 3.3 | 3.3 |
| Length (mm) | 3.3 | 3.3 |
| Thickness (mm) | .8 | .8 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD19538Q3A | CSD19538Q3AT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 13.7 | 13.7 |
| IDM, Max Pulsed Drain Current(Max), A | 36 | 36 |
| Package, mm | SON3x3 | SON3x3 |
| QG Typ, nC | 4.3 | 4.3 |
| QGD Typ, nC | 0.8 | 0.8 |
| Rds(on) Max at VGS=10V, mOhms | 61 | 61 |
| VDS, V | 100 | 100 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 3.2 | 3.2 |
Öko-Plan
| CSD19538Q3A | CSD19538Q3AT | |
|---|---|---|
| RoHS | Compliant | Compliant |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD19538Q3A (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor