Datasheet Texas Instruments CSD19537Q3 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19537Q3 |
100 V N-Kanal-NexFET-Leistungs-MOSFET
Datenblätter
CSD19537Q3 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 504 Kb, Revision: A, Datei veröffentlicht: May 31, 2016
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Preise
Status
| CSD19537Q3 | CSD19537Q3T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
Verpackung
| CSD19537Q3 | CSD19537Q3T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQG | DQG |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD19537 | CSD19537 |
| Width (mm) | 3.3 | 3.3 |
| Length (mm) | 3.3 | 3.3 |
| Thickness (mm) | 1 | 1 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD19537Q3 | CSD19537Q3T |
|---|---|---|
| ID, Silicon limited at Tc=25degC, A | 53 | 53 |
| IDM, Max Pulsed Drain Current(Max), A | 219 | 219 |
| Package, mm | SON3x3 | SON3x3 |
| QG Typ, nC | 16 | 16 |
| QGD Typ, nC | 2.9 | 2.9 |
| Rds(on) Max at VGS=10V, mOhms | 14.5 | 14.5 |
| VDS, V | 100 | 100 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 3.0 | 3.0 |
Öko-Plan
| CSD19537Q3 | CSD19537Q3T | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD19537Q3 (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor