Datasheet Texas Instruments CSD19506KTT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19506KTT |
80 V, N-Kanal-NexFET-Leistungs-MOSFET
Datenblätter
CSD19506KTT 80 V N-Channel NexFET Power MOSFET datasheet
PDF, 403 Kb, Datei veröffentlicht: Mar 8, 2016
Auszug aus dem Dokument
Preise
Status
| CSD19506KTT | CSD19506KTTT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
Verpackung
| CSD19506KTT | CSD19506KTTT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 3 | 3 |
| Package Type | KTT | KTT |
| Industry STD Term | TO-263 | TO-263 |
| JEDEC Code | R-PSFM-G | R-PSFM-G |
| Package QTY | 500 | 50 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD19506KTT | CSD19506KTT |
| Width (mm) | 8.41 | 8.41 |
| Length (mm) | 10.18 | 10.18 |
| Thickness (mm) | 4.44 | 4.44 |
| Pitch (mm) | 2.54 | 2.54 |
| Max Height (mm) | 4.83 | 4.83 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD19506KTT | CSD19506KTTT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 291 | 291 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | D2PAK | D2PAK |
| QG Typ, nC | 120 | 120 |
| QGD Typ, nC | 20 | 20 |
| Rds(on) Max at VGS=10V, mOhms | 2.3 | 2.3 |
| VDS, V | 80 | 80 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 2.5 | 2.5 |
Öko-Plan
| CSD19506KTT | CSD19506KTTT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
Modellreihe
Serie: CSD19506KTT (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor