Datasheet Texas Instruments CSD18511Q5AT — Datenblatt
Hersteller | Texas Instruments |
Serie | CSD18511Q5A |
Artikelnummer | CSD18511Q5AT |
40 V N-Kanal NexFET ™ Leistungs-MOSFET 8-VSONP -55 bis 150
Datenblätter
CSD18511Q5A 40 V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 596 Kb, Datei veröffentlicht: Dec 12, 2016
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | No |
Verpackung
Pin | 8 |
Package Type | DQJ |
Package QTY | 250 |
Carrier | SMALL T&R |
Device Marking | CSD18511 |
Width (mm) | 6 |
Length (mm) | 4.9 |
Thickness (mm) | 1 |
Mechanical Data | Herunterladen |
Parameter
Configuration | Single |
ID, Silicon limited at Tc=25degC | 159 A |
IDM, Max Pulsed Drain Current(Max) | 400 A |
Package | SON5x6 mm |
QG Typ | 63 nC |
QGD Typ | 11.2 nC |
RDS(on) Typ at VGS=4.5V | 2.7 mOhm |
Rds(on) Max at VGS=10V | 2.3 mOhms |
Rds(on) Max at VGS=4.5V | 3.5 mOhms |
VDS | 40 V |
VGS | 20 V |
VGSTH Typ | 1.8 V |
Öko-Plan
RoHS | Compliant |
Pb Free | Yes |
Modellreihe
Serie: CSD18511Q5A (2)
- CSD18511Q5A CSD18511Q5AT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor