Datasheet Texas Instruments CSD16401Q5 — Datenblatt
Hersteller | Texas Instruments |
Serie | CSD16401Q5 |
N-Kanal NexFET ™ Leistungs-MOSFET
Datenblätter
CSD16401Q5 25-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 355 Kb, Revision: B, Datei veröffentlicht: Sep 28, 2015
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Preise
Status
CSD16401Q5 | CSD16401Q5T | |
---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes | No |
Verpackung
CSD16401Q5 | CSD16401Q5T | |
---|---|---|
N | 1 | 2 |
Pin | 8 | 8 |
Package Type | DQH | DQH |
Industry STD Term | VSON-CLIP | VSON-CLIP |
JEDEC Code | R-PSSO-N | R-PSSO-N |
Package QTY | 2500 | 250 |
Carrier | LARGE T&R | SMALL T&R |
Device Marking | CSD16401 | CSD16401 |
Width (mm) | 6 | 6 |
Length (mm) | 5 | 5 |
Thickness (mm) | 1 | 1 |
Pitch (mm) | 1.27 | 1.27 |
Max Height (mm) | 1.05 | 1.05 |
Mechanical Data | Herunterladen | Herunterladen |
Parameter
Parameters / Models | CSD16401Q5 | CSD16401Q5T |
---|---|---|
Configuration | Single | Single |
IDM, Max Pulsed Drain Current(Max), A | 240 | 240 |
Package, mm | SON5x6 | SON5x6 |
QG Typ, nC | 21 | 21 |
QGD Typ, nC | 5.2 | 5.2 |
RDS(on) Typ at VGS=4.5V, mOhm | 1.8 | 1.8 |
Rds(on) Max at VGS=10V, mOhms | 1.6 | 1.6 |
Rds(on) Max at VGS=4.5V, mOhms | 2.3 | 2.3 |
VDS, V | 25 | 25 |
VGS, V | 16 | 16 |
VGSTH Typ, V | 1.5 | 1.5 |
Öko-Plan
CSD16401Q5 | CSD16401Q5T | |
---|---|---|
RoHS | Compliant | Compliant |
Pb Free | Yes | Yes |
Anwendungshinweise
- Intel VR11.1 Server Reference DesignPDF, 38 Kb, Datei veröffentlicht: Jul 21, 2010
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD16401Q5 (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor