Datasheet Texas Instruments ADS58B19 — Datenblatt

Hersteller	Texas Instruments
Serie	ADS58B19

Datenblätter

Preise

Status

Verpackung

Parameter

Parameters / Models	ADS58B19IRGZR	ADS58B19IRGZT
# Input Channels	1	1
Analog Input BW, MHz	550	550
Architecture	Pipeline	Pipeline
DNL(Max), +/-LSB	0.85	0.85
DNL(Typ), +/-LSB	0.15	0.15
ENOB, Bits	9	9
INL(Max), +/-LSB	1.2	1.2
INL(Typ), +/-LSB	0.25	0.25
Input Buffer	Yes	Yes
Input Range, Vp-p	1.5	1.5
Interface	Parallel CMOS,Parallel LVDS	Parallel CMOS,Parallel LVDS
Operating Temperature Range, C	-40 to 85	-40 to 85
Package Group	VQFN	VQFN
Package Size: mm2:W x L, PKG	48VQFN: 49 mm2: 7 x 7(VQFN)	48VQFN: 49 mm2: 7 x 7(VQFN)
Power Consumption(Typ), mW	287	287
Rating	Catalog	Catalog
Reference Mode	Int	Int
Resolution, Bits	9	9
SFDR, dB	76.5	76.5
SINAD, dB	55.8	55.8
SNR, dB	55.8	55.8
Sample Rate(Max), MSPS	250	250

Öko-Plan

Anwendungshinweise

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Modellreihe

Herstellerklassifikation

• Semiconductors> Data Converters> Analog-to-Digital Converters (ADCs)> High Speed ADCs (>10MSPS)