Datasheet Texas Instruments 74ACT11132 — Datenblatt

HerstellerTexas Instruments
Serie74ACT11132
Datasheet Texas Instruments 74ACT11132

Vierfache Positiv-NAND-Gatter mit Schmitt-Trigger-Eingängen

Datenblätter

Quadruple Positive-NAND Gate With Schmitt-Trigger Inputs
PDF, 72 Kb, Datei veröffentlicht: Apr 1, 1993

Preise

Status

74ACT11132D74ACT11132DR74ACT11132N
Lifecycle StatusObsolete (Manufacturer has discontinued the production of the device)Obsolete (Manufacturer has discontinued the production of the device)Obsolete (Manufacturer has discontinued the production of the device)
Manufacture's Sample AvailabilityNoNoNo

Verpackung

74ACT11132D74ACT11132DR74ACT11132N
N123
Pin161616
Package TypeDDN
Industry STD TermSOICSOICPDIP
JEDEC CodeR-PDSO-GR-PDSO-GR-PDIP-T
Width (mm)3.913.916.35
Length (mm)9.99.919.3
Thickness (mm)1.581.583.9
Pitch (mm)1.271.272.54
Max Height (mm)1.751.755.08
Mechanical DataHerunterladenHerunterladenHerunterladen

Öko-Plan

74ACT11132D74ACT11132DR74ACT11132N
RoHSNot CompliantNot CompliantNot Compliant
Pb FreeNoNoNo

Anwendungshinweise

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  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Kb, Datei veröffentlicht: Jul 8, 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
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    The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
  • CMOS Power Consumption and CPD Calculation (Rev. B)
    PDF, 89 Kb, Revision: B, Datei veröffentlicht: Jun 1, 1997
    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
  • Designing With Logic (Rev. C)
    PDF, 186 Kb, Revision: C, Datei veröffentlicht: Jun 1, 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
    PDF, 43 Kb, Datei veröffentlicht: Apr 1, 1996
    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

Modellreihe

Serie: 74ACT11132 (3)

Herstellerklassifikation

  • Semiconductors> Logic> Gate> NAND Gate