Datasheet ON Semiconductor 1N5821G — Datenblatt

1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high-frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features •Extremely Low VF
•Low Power Loss/High Efficiency
•Low Stored Charge, Majority Carrier Conduction
•Shipped in plastic bags, 500 per bag
•Available in Tape and Reel, 1500 per reel, by adding a "RL'' suffix to http://onsemi.com SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS the part number •Pb-Free Packages are Available*
Mechanical Characteristics: •Case: Epoxy, Molded
•Weight: 1.1 Gram (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable •Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Polarity: Cathode indicated by Polarity Band AXIAL LEAD
CASE 267-05 …