Datasheet Texas Instruments CSD17579Q5AT — Datenblatt

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SLPS524 – MARCH 2015 CSD17579Q5A 30 V N-Channel NexFET™ Power MOSFETs
1 Features Product Summary Low Qg and Qgd
Low RDS(on)
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm × 6 mm Plastic Package 1 TA = 25°C 30 V Qg Gate Charge Total (4.5 V) 5.4 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage mΩ VGS = 10 V 8.4 mΩ 1.5 V Device Media Qty Package Ship 13-Inch Reel 2500 CSD17579Q5AT 7-Inch Reel 250 SON 5 x 6 mm
Plastic Package Tape and
Reel (1) For all available packages, see the orderable addendum at
the end of the data sheet. Absolute Maximum Ratings This 30 V, 8.4 mО©, SON 5 mm x 6mm NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications.
Top View TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 25 Continuous Drain Current (Silicon limited),
TC = 25В°C 46 ID
8 1 (1) S 2 7 D S 3 6 D 14 Pulsed Drain Current(2) 105 Power Dissipation(1) 3.1 Power Dissipation, TC = 25В°C 36 TJ, …