Datasheet Texas Instruments CSD25304W1015 — Datenblatt
Hersteller | Texas Instruments |
Serie | CSD25304W1015 |
Artikelnummer | CSD25304W1015 |
CSD25304W1015 20-V-P-Kanal-NexFET ™ -Leistungs-MOSFET 6-DSBGA
Datenblätter
CSD25304W1015 20-V P-Channel NexFET Power MOSFET datasheet
PDF, 415 Kb, Revision: A, Datei veröffentlicht: Aug 26, 2014
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 6 |
Package Type | YZC |
Industry STD Term | DSBGA |
JEDEC Code | R-XBGA-N |
Package QTY | 3000 |
Carrier | LARGE T&R |
Device Marking | 25304 |
Width (mm) | 1.8 |
Length (mm) | 1.5 |
Thickness (mm) | 2 |
Pitch (mm) | .5 |
Max Height (mm) | 1 |
Mechanical Data | Herunterladen |
Parameter
Configuration | Single |
Id Max Cont | -3 A |
Id Peak(Max) | -41 A |
Package | WLP 1.0x1.5 mm |
QG Typ | 3.3 nC |
QGD Typ | 0.5 nC |
QGS Typ | 0.7 nC |
Rds(on) Max at VGS=1.8V | 92 mOhms |
Rds(on) Max at VGS=2.5V | 45.5 mOhms |
Rds(on) Max at VGS=4.5V | 32.5 mOhms |
VDS | -20 V |
VGS | -8 V |
VGSTH Typ | -0.8 V |
Öko-Plan
RoHS | Compliant |
Modellreihe
Serie: CSD25304W1015 (2)
- CSD25304W1015 CSD25304W1015T
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > P-Channel MOSFET Transistor