Datasheet Texas Instruments LM5110-3SD — Datenblatt
| Hersteller | Texas Instruments |
| Serie | LM5110 |
| Artikelnummer | LM5110-3SD |
Dual 5A Compound Gate-Treiber mit negativer Ausgangsspannung 10-WSON -40 bis 125
Datenblätter
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability datasheet
PDF, 1.0 Mb, Revision: B, Datei veröffentlicht: Nov 5, 2012
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Preise
Status
| Lifecycle Status | NRND (Not recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 10 |
| Package Type | DPR |
| Industry STD Term | WSON |
| JEDEC Code | S-PDSO-N |
| Package QTY | 1000 |
| Carrier | LARGE T&R |
| Device Marking | 5110-3 |
| Width (mm) | 4 |
| Length (mm) | 4 |
| Thickness (mm) | .75 |
| Pitch (mm) | .8 |
| Max Height (mm) | .8 |
| Mechanical Data | Herunterladen |
Ersatz
| Replacement | LM5110-3SD/NOPB |
| Replacement Code | S |
Parameter
| Channel Input Logic | Inverting,Non-Inverting,Combination |
| Fall Time | 12 ns |
| Input Threshold | TTL |
| Input VCC(Max) | 14 V |
| Input VCC(Min) | 3.5 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | WSON |
| Peak Output Current | 5 A |
| Power Switch | MOSFET |
| Prop Delay | 25 ns |
| Rating | Catalog |
| Rise Time | 14 ns |
| Special Features | Negative Output Voltgae Capability |
Öko-Plan
| RoHS | See ti.com |
Modellreihe
Serie: LM5110 (13)
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver
Andere Namen:
LM51103SD, LM5110 3SD