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SLPS482B – DECEMBER 2013 – REVISED JANUARY 2015 CSD19533KCS, 100 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 100 V Qg Gate Charge Total (10 V) 27 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 5.4 nC VGS = 6 V 9.7 mΩ VGS = 10 V 8.7 mΩ 2.8 V Ordering Information(1) 2 Applications UNIT VDS Secondary Side Synchronous Rectifier
Motor Control Device Package Media Qty Ship CSD19533KCS TO-220 Plastic
Package Tube 50 Tube 3 Description (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 100 V, 8.7 mО©, TO-220 NexFETв„ў power
MOSFET is designed to minimize losses in power
conversion applications. TA = 25В°C Drain (Pin 2) Absolute Maximum Ratings
VALUE UNIT VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 86 Continuous Drain Current (Silicon limited),
TC = 100В°C 61 IDM Pulsed Drain Current (1) 207 A PD Power Dissipation 188 W TJ,
Tstg Operating Junction and …
