Datasheet Texas Instruments CSD19532KTT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19532KTT |
| Artikelnummer | CSD19532KTT |
100 V, N-Kanal-NexFET-Leistungs-MOSFET 3-DDPAK / TO-263 -55 bis 175
Datenblätter
CSD19532KTT 100 V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 367 Kb, Datei veröffentlicht: Oct 27, 2015
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 3 |
| Package Type | KTT |
| Industry STD Term | TO-263 |
| JEDEC Code | R-PSFM-G |
| Package QTY | 500 |
| Carrier | LARGE T&R |
| Device Marking | CSD19532KTT |
| Width (mm) | 8.41 |
| Length (mm) | 10.18 |
| Thickness (mm) | 4.44 |
| Pitch (mm) | 2.54 |
| Max Height (mm) | 4.83 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 136 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | D2PAK mm |
| QG Typ | 44 nC |
| QGD Typ | 17 nC |
| Rds(on) Max at VGS=10V | 5.6 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 2.6 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Modellreihe
Serie: CSD19532KTT (2)
- CSD19532KTT CSD19532KTTT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor