Datasheet Texas Instruments UC3708DWTR — Datenblatt
| Hersteller | Texas Instruments |
| Serie | UC3708 |
| Artikelnummer | UC3708DWTR |
Nicht invertierende Hochgeschwindigkeitstreiber 16-SOIC 0 bis 70
Datenblätter
Dual Non-Inverting Power Driver datasheet
PDF, 1.0 Mb, Revision: C, Datei veröffentlicht: Sep 25, 2007
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 16 |
| Package Type | DW |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2000 |
| Carrier | LARGE T&R |
| Device Marking | UC3708DW |
| Width (mm) | 7.5 |
| Length (mm) | 10.3 |
| Thickness (mm) | 2.35 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 2.65 |
| Mechanical Data | Herunterladen |
Öko-Plan
| RoHS | Compliant |
Anwendungshinweise
- DN-35 IGBT Drive Using MOSFET Gate DriversPDF, 54 Kb, Datei veröffentlicht: Sep 5, 1999
The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices - U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Kb, Datei veröffentlicht: Sep 5, 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Kb, Datei veröffentlicht: Sep 5, 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Modellreihe
Serie: UC3708 (8)
- UC3708DW UC3708DWG4 UC3708DWTR UC3708DWTRG4 UC3708N UC3708NE UC3708NG4 UC3708Q
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver