Datasheet Texas Instruments V62/11601-02YE-T — Datenblatt
Hersteller | Texas Instruments |
Serie | UCC27322-EP |
Artikelnummer | V62/11601-02YE-T |
Enhanced Product Single 9-A-Hochgeschwindigkeits-Low-Side-MOSFET-Treiber mit Enable 8-SOIC -55 bis 125
Datenblätter
Single 9-A High Speed Low-Side MOSFET Driver With Enable datasheet
PDF, 1.0 Mb, Revision: C, Datei veröffentlicht: Mar 15, 2013
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | No |
Verpackung
Pin | 8 |
Package Type | D |
Industry STD Term | SOIC |
JEDEC Code | R-PDSO-G |
Package QTY | 75 |
Carrier | TUBE |
Device Marking | 27322M |
Width (mm) | 3.91 |
Length (mm) | 4.9 |
Thickness (mm) | 1.58 |
Pitch (mm) | 1.27 |
Max Height (mm) | 1.75 |
Mechanical Data | Herunterladen |
Parameter
Fall Time | 20 ns |
Input Threshold | CMOS,TTL |
Input VCC(Max) | 15 V |
Input VCC(Min) | 4 V |
Number of Channels | 1 |
Operating Temperature Range | -40 to 105,-55 to 125 C |
Package Group | SOIC |
Peak Output Current | 9 A |
Power Switch | MOSFET,IGBT |
Prop Delay | 25 ns |
Rating | HiRel Enhanced Product |
Rise Time | 20 ns |
Special Features | Enable Pin |
Öko-Plan
RoHS | Compliant |
Modellreihe
Serie: UCC27322-EP (6)
- UCC27322MDEP UCC27322MDREP UCC27322TDGKREP V62/11601-01XE V62/11601-02YE V62/11601-02YE-T
Herstellerklassifikation
- Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver
Andere Namen:
V62/1160102YET, V62/11601 02YE T