Datasheet Texas Instruments CSD18509Q5B — Datenblatt

Order
Now Product
Folder Support &
Community Tools &
Software Technical
Documents CSD18509Q5B
SLPS476A – JUNE 2014 – REVISED MAY 2017 CSD18509Q5B N-Channel NexFET™ Power MOSFETs
1 Features 1 Product Summary Ultra-Low On Resistance
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package TA = 25°C 40 V Qg Gate Charge Total (10 V) 150 nC Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage mΩ
V Qty Media Package Ship 2500 13-Inch Reel CSD18509Q5BT 250 7-Inch Reel SON 5 Г— 6 mm
Plastic Package Tape and
Reel 8 1 TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 299 ID 7 2 38 Pulsed Drain Current, TA = 25В°C(2) 400 Power Dissipation(1) 3.1 Power Dissipation, TC = 25В°C 195 TJ,
Tstg Operating Junction and
Storage Temperature Range 6 3 –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 83, L = 0.1 mH, RG = 25 Ω 345 mJ PD D 5 4 A Continuous Drain Current(1) D D D A
W (1) Typical RОёJA = 40В°C/W on a 1-inch2, 2-oz. Cu pad on a …