Datasheet Texas Instruments TPS24750RUVT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | TPS24750 |
| Artikelnummer | TPS24750RUVT |
18 V, 12 A, 3 m © eFuse mit IMON und PG 36-VQFN -40 bis 85
Datenblätter
TPS2475x 12-A eFuse Circuit Protector with Current Monitor datasheet
PDF, 2.1 Mb, Revision: B, Datei veröffentlicht: Sep 29, 2016
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 36 |
| Package Type | RUV |
| Industry STD Term | VQFN |
| JEDEC Code | R-PQFP-N |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | TPS24750 |
| Width (mm) | 3.5 |
| Length (mm) | 7 |
| Thickness (mm) | .9 |
| Pitch (mm) | .5 |
| Max Height (mm) | 1 |
| Mechanical Data | Herunterladen |
Parameter
| Channel(s) Controlled | 1 |
| Current Limit Accuracy | N/A |
| Current Limit Function Enabled | Startup Only |
| Current Limit Type | Adjustable |
| Current Limit(Max) | 12 A |
| Current Limit(Min) | 0.01 A |
| FET Protection | SOA |
| Fault Response | Latch Off |
| Imax | 12 A |
| Number of Channels | 1 |
| ON_OFF Control Input | ENUV s |
| Operating Temperature Range | -40 to 85 C |
| Overcurrent Response | Current Limiting |
| Overvoltage Response | Cutoff |
| Package Group | VQFN |
| Package Size: mm2:W x L | 36VQFN: 25 mm2: 7 x 3.5(VQFN) PKG |
| Rise Time(Typ) | 800 us |
| Ron(Typ) | 3 mOhm |
| Special Features | Current Sense/Monitor,Fault Reporting,Overvoltage Protection,Power Good,Reverse Current Protection,Thermal Shutdown,Under Voltage Lock Out |
| UL Recognition | No |
| Vabsmax_cont | 30 V |
| Vin(Max) | 18 V |
| Vin(Min) | 2.5 V |
Öko-Plan
| RoHS | Compliant |
Design Kits und Evaluierungsmodule
- Evaluation Modules & Boards: TPS24750EVM-546
12A Integrated Hot-Swap Protector with Current Monitor
Lifecycle Status: Active (Recommended for new designs)
Modellreihe
Serie: TPS24750 (2)
- TPS24750RUVR TPS24750RUVT
Herstellerklassifikation
- Semiconductors > Power Management > Protection, Monitoring and Hot Swap > eFuses (Integrated FET)