Datasheet Texas Instruments LM5109BQNGTTQ1 — Datenblatt
Hersteller | Texas Instruments |
Serie | LM5109B-Q1 |
Artikelnummer | LM5109BQNGTTQ1 |
Hochspannungs-1A-Peak-Halbbrückentor-Treiber 8-WSON -40 bis 125
Datenblätter
LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver datasheet
PDF, 799 Kb, Revision: A, Datei veröffentlicht: Dec 8, 2015
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 8 |
Package Type | NGT |
Industry STD Term | WSON |
JEDEC Code | S-PDSO-N |
Package QTY | 1000 |
Carrier | SMALL T&R |
Device Marking | L5109Q |
Width (mm) | 4 |
Length (mm) | 4 |
Thickness (mm) | .8 |
Pitch (mm) | .8 |
Max Height (mm) | .8 |
Mechanical Data | Herunterladen |
Parameter
Bus Voltage | 90 V |
Channel Input Logic | TTL |
Fall Time | 15 ns |
Input Threshold | TTL |
Input VCC(Max) | 14 V |
Input VCC(Min) | 8 V |
Iq | 10 uA |
Negative Voltage Handling at HS Pin | -1 V |
Number of Channels | 2 |
Operating Temperature Range | -40 to 125 C |
Package Group | WSON |
Peak Output Current | 1 A |
Power Switch | MOSFET |
Prop Delay | 30 ns |
Rating | Automotive |
Rise Time | 15 ns |
Special Features | N/A |
Öko-Plan
RoHS | Compliant |
Modellreihe
Serie: LM5109B-Q1 (2)
- LM5109BQNGTRQ1 LM5109BQNGTTQ1
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Half-bridge Driver