Datasheet Texas Instruments CSD18542KTT — Datenblatt
Hersteller | Texas Instruments |
Serie | CSD18542KTT |
Artikelnummer | CSD18542KTT |
60 V N-Kanal-NexFET-Leistungs-MOSFET 3-DDPAK / TO-263 -55 bis 175
Datenblätter
CSD18542KTT 60-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 520 Kb, Revision: A, Datei veröffentlicht: Mar 6, 2017
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 3 |
Package Type | KTT |
Industry STD Term | TO-263 |
JEDEC Code | R-PSFM-G |
Package QTY | 500 |
Carrier | LARGE T&R |
Device Marking | CSD18542KTT |
Width (mm) | 8.41 |
Length (mm) | 10.18 |
Thickness (mm) | 4.44 |
Pitch (mm) | 2.54 |
Max Height (mm) | 4.83 |
Mechanical Data | Herunterladen |
Parameter
Configuration | Single |
ID, Silicon limited at Tc=25degC | 170 A |
IDM, Max Pulsed Drain Current(Max) | 400 A |
Package | D2PAK mm |
QG Typ | 44 nC |
QGD Typ | 6.9 nC |
RDS(on) Typ at VGS=4.5V | 4.0 mOhm |
Rds(on) Max at VGS=10V | 4.0 mOhms |
Rds(on) Max at VGS=4.5V | 5.1 mOhms |
VDS | 60 V |
VGS | 20 V |
VGSTH Typ | 1.8 V |
Öko-Plan
RoHS | Compliant |
Pb Free | Yes |
Modellreihe
Serie: CSD18542KTT (2)
- CSD18542KTT CSD18542KTTT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor