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Documents CSD13201W10
SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 CSD13201W10 N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Small Footprint (1 mm Г— 1 mm)
Low Profile 0.62-mm Height
Pb-Free
RoHS Compliant
Halogen-Free
Gate-Source Voltage Clamp TA = 25В°C TYPICAL VALUE Drain-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 2.3 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On
Resistance VGS(th) Threshold Voltage 2 Applications UNIT VDS 0.3 nC VGS = 1.8 V 38 VGS = 2.5 V 29 VGS = 4.5 V 26 0.8 mΩ
mΩ
V Device Information(1) Battery Management
Load Switch
Battery Protection PART NUMBER PACKAGE MEDIA CSD13201W10 1 mm Г— 1 mm
Wafer Level Package 7-inch
reel QTY SHIP 3000 Tape and
Reel (1) For all available packages, see the orderable addendum at
the end of the data sheet. 3 Description …
