Datasheet Texas Instruments CSD16415Q5 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD16415Q5 |
| Artikelnummer | CSD16415Q5 |
N-Kanal-NexFET-Leistungs-MOSFET 8-VSON-CLIP -55 bis 150
Datenblätter
CSD16415Q5 25-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 943 Kb, Revision: A, Datei veröffentlicht: Sep 28, 2015
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 8 |
| Package Type | DQH |
| Industry STD Term | VSON-CLIP |
| JEDEC Code | R-PSSO-N |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | CSD16415 |
| Width (mm) | 6 |
| Length (mm) | 5 |
| Thickness (mm) | 1 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.05 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| IDM, Max Pulsed Drain Current(Max) | 200 A |
| Package | SON5x6 mm |
| QG Typ | 21 nC |
| QGD Typ | 5.2 nC |
| RDS(on) Typ at VGS=4.5V | 1.5 mOhm |
| Rds(on) Max at VGS=10V | 1.15 mOhms |
| Rds(on) Max at VGS=4.5V | 1.8 mOhms |
| VDS | 25 V |
| VGS | 16 V |
| VGSTH Typ | 1.5 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD16415Q5 (2)
- CSD16415Q5 CSD16415Q5T
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor