Datasheet Texas Instruments UC2709DW — Datenblatt
| Hersteller | Texas Instruments |
| Serie | UC2709 |
| Artikelnummer | UC2709DW |
Invertieren von Hochgeschwindigkeits-MOSFET-Treibern 16-SOIC -40 bis 85
Datenblätter
UC3709 Dual High-Speed FET Driver datasheet
PDF, 548 Kb, Revision: C, Datei veröffentlicht: Feb 27, 2008
Auszug aus dem Dokument
Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 16 |
| Package Type | DW |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 40 |
| Carrier | TUBE |
| Device Marking | UC2709DW |
| Width (mm) | 7.5 |
| Length (mm) | 10.3 |
| Thickness (mm) | 2.35 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 2.65 |
| Mechanical Data | Herunterladen |
Öko-Plan
| RoHS | Compliant |
Anwendungshinweise
- U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Kb, Datei veröffentlicht: Sep 5, 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Kb, Datei veröffentlicht: Sep 5, 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Modellreihe
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver