CSD15571Q2
www.ti.com SLPS435 – AUGUST 2013 20-V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD15571Q2 FEATURES 1 2 PRODUCT SUMMARY Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 2-mm Г— 2-mm Plastic Package VDS Drain to Source Voltage 20 V Qg Gate Charge Total (4.5V) 2.5 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC
16 mΩ VGS = 10V 12 mΩ 1.45 V ORDERING INFORMATION
Device Package Media CSD15571Q2 SON 2-mm Г— 2-mm
Plastic Package 7-Inch
Reel APPLICATIONS 0.66
VGS = 4.5V Optimized for Load Switch Applications
Storage, Tablets, and Handheld Devices
Optimized for Control FET Applications
Point of Load Synchronous Buck Converters Qty Ship 3000 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 20 V DESCRIPTION VGS Gate to Source Voltage В±20 V The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion and load
management applications. The SON 2x2 offers
excellent thermal performance for the size of the
package. ID Continuous Drain Current (Package Limit) 22 A Continuous Drain Current(1) 10 A IDM Pulsed Drain Current, TA = 25В°C(2) 52 A PD Power Dissipation(1) 2.5 W TJ, …
