Datasheet Texas Instruments LM5111-1M/NOPB — Datenblatt
Hersteller | Texas Instruments |
Serie | LM5111 |
Artikelnummer | LM5111-1M/NOPB |
Dual 5A Compound Gate Treiber 8-SOIC -40 bis 125
Datenblätter
LM5111 Dual 5-A Compound Gate Driver datasheet
PDF, 954 Kb, Revision: H, Datei veröffentlicht: Sep 28, 2016
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Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 8 | 8 |
Package Type | D | D |
Industry STD Term | SOIC | SOIC |
JEDEC Code | R-PDSO-G | R-PDSO-G |
Package QTY | 95 | 95 |
Carrier | TUBE | TUBE |
Device Marking | 5111 | -1M |
Width (mm) | 3.91 | 3.91 |
Length (mm) | 4.9 | 4.9 |
Thickness (mm) | 1.58 | 1.58 |
Pitch (mm) | 1.27 | 1.27 |
Max Height (mm) | 1.75 | 1.75 |
Mechanical Data | Herunterladen | Herunterladen |
Parameter
Channel Input Logic | Inverting,Non-Inverting,Combination |
Fall Time | 12 ns |
Input Threshold | TTL |
Input VCC(Max) | 14 V |
Input VCC(Min) | 3.5 V |
Number of Channels | 2 |
Operating Temperature Range | -40 to 125 C |
Package Group | SOIC |
Peak Output Current | 5 A |
Power Switch | MOSFET |
Prop Delay | 25 ns |
Rating | Catalog |
Rise Time | 14 ns |
Special Features | UVLO Configured to Drive PFET through OUT_A |
Öko-Plan
RoHS | Compliant |
Modellreihe
Serie: LM5111 (15)
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver
Andere Namen:
LM51111M/NOPB, LM5111 1M/NOPB