Datasheet Texas Instruments CSD17556Q5B — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD17556Q5B |
| Artikelnummer | CSD17556Q5B |
30-V-N-Kanal-NexFET-Leistungs-MOSFETs 8-VSON-CLIP -55 bis 150
Datenblätter
CSD17556Q5B 30-V N-Channel NexFET Power MOSFET datasheet
PDF, 871 Kb, Revision: C, Datei veröffentlicht: Jan 17, 2017
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 8 |
| Package Type | DNK |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | CSD17556 |
| Width (mm) | 6 |
| Length (mm) | 5 |
| Thickness (mm) | .95 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 215 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | SON5x6 mm |
| QG Typ | 28.5 nC |
| QGD Typ | 6.9 nC |
| RDS(on) Typ at VGS=4.5V | 1.5 mOhm |
| Rds(on) Max at VGS=10V | 1.4 mOhms |
| Rds(on) Max at VGS=4.5V | 1.8 mOhms |
| VDS | 30 V |
| VGS | 20 V |
| VGSTH Typ | 1.4 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD17556Q5B (2)
- CSD17556Q5B CSD17556Q5BT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor