Datasheet Texas Instruments LM5111-4M/NOPB — Datenblatt
| Hersteller | Texas Instruments |
| Serie | LM5111 |
| Artikelnummer | LM5111-4M/NOPB |
Dual 5A Compound Gate Treiber 8-SOIC
Datenblätter
LM5111 Dual 5-A Compound Gate Driver datasheet
PDF, 954 Kb, Revision: H, Datei veröffentlicht: Sep 28, 2016
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 8 | 8 |
| Package Type | D | D |
| Industry STD Term | SOIC | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G |
| Package QTY | 95 | 95 |
| Carrier | TUBE | TUBE |
| Device Marking | 5111 | -4M |
| Width (mm) | 3.91 | 3.91 |
| Length (mm) | 4.9 | 4.9 |
| Thickness (mm) | 1.58 | 1.58 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 1.75 | 1.75 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Channel Input Logic | Inverting,Non-Inverting,Combination |
| Fall Time | 12 ns |
| Input Threshold | TTL |
| Input VCC(Max) | 14 V |
| Input VCC(Min) | 3.5 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | SOIC |
| Peak Output Current | 5 A |
| Power Switch | MOSFET |
| Prop Delay | 25 ns |
| Rating | Catalog |
| Rise Time | 14 ns |
| Special Features | UVLO Configured to Drive PFET through OUT_A |
Öko-Plan
| RoHS | Compliant |
Modellreihe
Serie: LM5111 (15)
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver
Andere Namen:
LM51114M/NOPB, LM5111 4M/NOPB