Datasheet Texas Instruments TPS1120DR — Datenblatt
| Hersteller | Texas Instruments |
| Serie | TPS1120 |
| Artikelnummer | TPS1120DR |
Dual-P-Kanal-MOSFET 8-SOIC im Enhancemenent-Modus
Datenblätter
Dual P-Channel Enhancement-Mode MOSFETs datasheet
PDF, 373 Kb, Revision: A, Datei veröffentlicht: Aug 1, 1995
Auszug aus dem Dokument
Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 1120 |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | Herunterladen |
Öko-Plan
| RoHS | Compliant |
Modellreihe
Serie: TPS1120 (3)
- TPS1120D TPS1120DG4 TPS1120DR
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > P-Channel MOSFET Transistor