Datasheet Texas Instruments CSD87312Q3E-ASY — Datenblatt
Hersteller | Texas Instruments |
Serie | CSD87312Q3E |
Artikelnummer | CSD87312Q3E-ASY |
Zwei 30-V-N-Kanal-NexFET-Leistungs-MOSFETs 8-VSON -55 bis 150
Datenblätter
Dual 30-V N-Channel NexFet Power MOSFET, CSD87312Q3E datasheet
PDF, 783 Kb, Datei veröffentlicht: Nov 19, 2011
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Preise
Status
Lifecycle Status | Preview (Device has been announced but is not in production. Samples may or may not be available) |
Manufacture's Sample Availability | No |
Verpackung
Pin | 8 |
Package Type | DPB |
Width (mm) | 3.3 |
Length (mm) | 3.3 |
Thickness (mm) | .9 |
Mechanical Data | Herunterladen |
Parameter
Approx. Price (US$) | 0.35 | 1ku |
Configuration | Dual Common Source |
IDM, Max Pulsed Drain Current(Max)(A) | 45 |
Package (mm) | SON3x3 |
QG Typ(nC) | 6.3 |
QGD Typ(nC) | 0.7 |
RDS(on) Typ at VGS=4.5V(mOhm) | 31 |
Rds(on) Max at VGS=4.5V(mOhms) | 38 |
VDS(V) | 30 |
VGS(V) | 10 |
VGSTH Typ(V) | 1 |
Öko-Plan
RoHS | Not Compliant |
Pb Free | No |
Modellreihe
Serie: CSD87312Q3E (2)
- CSD87312Q3E CSD87312Q3E-ASY
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor
Andere Namen:
CSD87312Q3EASY, CSD87312Q3E ASY