Datasheet Texas Instruments LMC662CN/NOPB — Datenblatt

HerstellerTexas Instruments
SerieLMC662
ArtikelnummerLMC662CN/NOPB
Datasheet Texas Instruments LMC662CN/NOPB

CMOS Dual Operational Amplifier 8-PDIP 0 bis 70

Datenblätter

LMC662 CMOS Dual Operational Amplifier datasheet
PDF, 1.2 Mb, Revision: C, Datei veröffentlicht: Mar 26, 2013
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Verpackung

Pin88
Package TypePP
Industry STD TermPDIPPDIP
JEDEC CodeR-PDIP-TR-PDIP-T
Package QTY4040
CarrierTUBETUBE
Device Marking662CNLMC
Width (mm)6.356.35
Length (mm)9.819.81
Thickness (mm)3.93.9
Pitch (mm)2.542.54
Max Height (mm)5.085.08
Mechanical DataHerunterladenHerunterladen

Parameter

Additional FeaturesN/A
ArchitectureCMOS
CMRR(Min)63 dB
CMRR(Typ)83 dB
GBW(Typ)1.4 MHz
Input Bias Current(Max)20 pA
Iq per channel(Max)0.65 mA
Iq per channel(Typ)0.38 mA
Number of Channels2
Offset Drift(Typ)1.3 uV/C
Operating Temperature Range-40 to 85,0 to 70 C
Output Current(Typ)21 mA
Package GroupPDIP
Package Size: mm2:W x LSee datasheet (PDIP) PKG
Rail-to-RailIn to V-,Out
RatingCatalog
Slew Rate(Typ)1.1 V/us
Total Supply Voltage(Max)15.5 +5V=5, +/-5V=10
Total Supply Voltage(Min)4.75 +5V=5, +/-5V=10
Vn at 1kHz(Typ)22 nV/rtHz
Vos (Offset Voltage @ 25C)(Max)3 mV

Öko-Plan

RoHSCompliant

Anwendungshinweise

  • Effect of Heavy Loads on Accuracy and Linearity of Op Amp Circuits (Rev. B)
    PDF, 81.7 Mb, Revision: B, Datei veröffentlicht: Apr 22, 2013
    This application report discusses the effect of heavy loads on the accuracy and linearity of operationalamplifier circuits.

Modellreihe

Herstellerklassifikation

  • Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Precision Op Amps