Datasheet Texas Instruments UC3706DWTR — Datenblatt
Hersteller | Texas Instruments |
Serie | UC3706 |
Artikelnummer | UC3706DWTR |
Duale Hochgeschwindigkeits-MOSFET-Treiber 16-SOIC 0 bis 70
Datenblätter
Dual Output Driver datasheet
PDF, 750 Kb, Revision: A, Datei veröffentlicht: May 2, 2001
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | No |
Verpackung
Pin | 16 |
Package Type | DW |
Industry STD Term | SOIC |
JEDEC Code | R-PDSO-G |
Package QTY | 2000 |
Carrier | LARGE T&R |
Device Marking | UC3706DW |
Width (mm) | 7.5 |
Length (mm) | 10.3 |
Thickness (mm) | 2.35 |
Pitch (mm) | 1.27 |
Max Height (mm) | 2.65 |
Mechanical Data | Herunterladen |
Öko-Plan
RoHS | Compliant |
Anwendungshinweise
- U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Kb, Datei veröffentlicht: Sep 5, 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Kb, Datei veröffentlicht: Sep 5, 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Modellreihe
Serie: UC3706 (6)
- UC3706DW UC3706DWG4 UC3706DWTR UC3706DWTRG4 UC3706N UC3706NG4
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver