Datasheet Texas Instruments CSD19502Q5BT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19502Q5B |
| Artikelnummer | CSD19502Q5BT |
N-Kanal, 3,4 mOhm, 80 V, SON5x6 NexFET ™ -Leistungs-MOSFET, CSD19502Q5B 8-VSON-CLIP -55 bis 150
Datenblätter
CSD19502Q5B 80 V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 867 Kb, Revision: B, Datei veröffentlicht: May 19, 2017
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 8 |
| Package Type | DNK |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD19502 |
| Width (mm) | 6 |
| Length (mm) | 5 |
| Thickness (mm) | .95 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 157 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | SON5x6 mm |
| QG Typ | 48 nC |
| QGD Typ | 8.6 nC |
| Rds(on) Max at VGS=10V | 4.1 mOhms |
| VDS | 80 V |
| VGS | 20 V |
| VGSTH Typ | 2.7 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD19502Q5B (2)
- CSD19502Q5B CSD19502Q5BT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor