Datasheet Texas Instruments TPS28226DR — Datenblatt
Hersteller | Texas Instruments |
Serie | TPS28226 |
Artikelnummer | TPS28226DR |
8-poliger hochfrequenter 4-Ampere-Sink-Synchron-MOSFET-Treiber 8-SOIC -40 bis 125
Datenblätter
TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers datasheet
PDF, 1.6 Mb, Revision: A, Datei veröffentlicht: Nov 26, 2014
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 8 |
Package Type | D |
Industry STD Term | SOIC |
JEDEC Code | R-PDSO-G |
Package QTY | 2500 |
Carrier | LARGE T&R |
Device Marking | 28226 |
Width (mm) | 3.91 |
Length (mm) | 4.9 |
Thickness (mm) | 1.58 |
Pitch (mm) | 1.27 |
Max Height (mm) | 1.75 |
Mechanical Data | Herunterladen |
Parameter
Bus Voltage | 24 V |
Channel Input Logic | TTL |
Fall Time | 5 ns |
Input Threshold | TTL |
Input VCC(Max) | 8 V |
Input VCC(Min) | 6.8 V |
Iq | 350 uA |
Number of Channels | 2 |
Operating Temperature Range | -40 to 125 C |
Package Group | SOIC |
Peak Output Current | 6 A |
Power Switch | MOSFET |
Prop Delay | 14 ns |
Rating | Catalog |
Rise Time | 10 ns |
Special Features | Synchronous Rectification |
Öko-Plan
RoHS | Compliant |
Modellreihe
Serie: TPS28226 (5)
- TPS28226D TPS28226DG4 TPS28226DR TPS28226DRBR TPS28226DRBT
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Half-bridge Driver