Datasheet Texas Instruments CSD19534Q5AT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD19534Q5A |
| Artikelnummer | CSD19534Q5AT |
100 V, N-Kanal-NexFET-Leistungs-MOSFET 8-VSONP
Datenblätter
CSD19534Q5A 100 V N-Channel NexFET Power MOSFETs datasheet
PDF, 368 Kb, Datei veröffentlicht: May 9, 2014
Auszug aus dem Dokument
Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 8 |
| Package Type | DQJ |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | CSD19534 |
| Width (mm) | 6 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 44 A |
| IDM, Max Pulsed Drain Current(Max) | 137 A |
| Package | SON5x6 mm |
| QG Typ | 17 nC |
| QGD Typ | 3.2 nC |
| Rds(on) Max at VGS=10V | 15.1 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 2.8 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Anwendungshinweise
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011
Modellreihe
Serie: CSD19534Q5A (2)
- CSD19534Q5A CSD19534Q5AT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor