CSD16342Q5A
www.ti.com SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012 N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16342Q5A FEATURES 1 2 PRODUCT SUMMARY Optimized for 5V Gate Drive
Resistance Rated at VGS = 2.5V
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm x 6mm Plastic Package Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 6.8 nC Qgd Gate Charge Gate to Drain RDS(on) Top View S 2 7 D S 3 6 D VGS = 4.5V 4.3 mΩ VGS = 8V 3.8 mΩ Threshold Voltage 0.85 V Package Media Qty Ship CSD16342Q5A SON 5 × 6 Plastic
Package 13-inch
reel 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion and optimized
for 5V gate drive applications. D mΩ TA = 25°C unless otherwise stated DESCRIPTION 8 6.1 Device VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 100 A Continuous Drain Current(1) 21 A IDM Pulsed Drain Current, TA = 25°C(2) 131 A PD Power Dissipation(1) 3 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 40A, L = 0.1mH, RG = 25Ω 80 mJ ID 1 nC VGS = 2.5V ORDERING INFORMATION Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control or Synchronous FET
Applications S 1.2 Drain to Source On Resistance Vth APPLICATIONS VDS (1) Typical RОёJA = 40В°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 …
