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SLPS537 – MARCH 2015 CSD13306W 12 V N Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra Low on Resistance
Low Qg and Qgd
Small Footprint 1 Г— 1.5 mm
Low Profile 0.62 mm Height
Pb Free
RoHS Compliant
Halogen Free TA = 25В°C TYPICAL VALUE Drain-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 8.6 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Voltage Threshold Battery Management
Load Switch
Battery Protection This 8.8 mО©, 12 V, N-Channel device is designed to
deliver the lowest on resistance and gate charge in a
small 1 x 1.5 mm outline with excellent thermal
characteristics and an ultra low profile.
Top View D mΩ VGS = 4.5 V 8.8 mΩ 1.0 V Device Qty Media Package Ship CSD13306W 3000 7-Inch Reel CSD13306WT 250 7-Inch Reel 1.0 mm × 1.5 mm
Wafer Level
Package Tape and
Reel S S D Absolute Maximum Ratings …
