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SLPS559 – MARCH 2015 CSD22204W –8 V P-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Low Resistance
Small Footprint 1.5 mm Г— 1.5 mm
Pb Free
Gate ESD Protection
RoHS Compliant
Halogen Free
Gate-Source Voltage Clamp TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage Battery Management
Battery Protection
Load Switch Applications This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is
designed to deliver the lowest on resistance and gate
charge in the smallest outline possible with excellent
thermal characteristics in an ultra low profile. Low onresistance coupled with the small footprint and low
profile make the device ideal for battery operated
space constrained applications. S S S nC
11.5 mΩ VGS = –4.5 V 8.2 mΩ –0.7 V Device Qty Media Package Ship CSD22204W 3000 7-Inch Reel CSD22204WT 250 7-Inch Reel 1.5 mm × 1.5 mm
Wafer BGA …
