Datasheet Texas Instruments CSD85302L — Datenblatt
Hersteller | Texas Instruments |
Serie | CSD85302L |
Artikelnummer | CSD85302L |
20 V Dual N-Kanal NexFET Power MOSFET 4-PICOSTAR -55 bis 150
Datenblätter
CSD85302L 20 V Dual N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 413 Kb, Datei veröffentlicht: Nov 19, 2015
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Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 4 |
Package Type | YME |
Package QTY | 3000 |
Carrier | LARGE T&R |
Device Marking | 85302 |
Width (mm) | 1.35 |
Length (mm) | 1.35 |
Thickness (mm) | .2 |
Mechanical Data | Herunterladen |
Parameter
Configuration | Dual Common Drain |
IDM, Max Pulsed Drain Current(Max) | 37 A |
Package | LGA 1.35x1.35 mm |
QG Typ | 6.0 nC |
QGD Typ | 1.4 nC |
RDS(on) Typ at VGS=4.5V | 20 mOhm |
Rds(on) Max at VGS=4.5V | 24 mOhms |
VDS | 20 V |
VGS | 10 V |
VGSTH Typ | 0.90 V |
Öko-Plan
RoHS | Compliant |
Modellreihe
Serie: CSD85302L (2)
- CSD85302L CSD85302LT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor