Datasheet Texas Instruments CSD16570Q5B — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD16570Q5B |
| Artikelnummer | CSD16570Q5B |
CSD16570Q5B, 25-V-N-Kanal-NexFET ™ -Leistungs-MOSFET 8-VSON-CLIP -40 bis 85
Datenblätter
CSD16570Q5B 25-V N-Channel NexFET Power MOSFET datasheet
PDF, 438 Kb, Revision: A, Datei veröffentlicht: May 19, 2017
Auszug aus dem Dokument
Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 8 |
| Package Type | DNK |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | CSD16570 |
| Width (mm) | 6 |
| Length (mm) | 5 |
| Thickness (mm) | .95 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 456 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | SON5x6 mm |
| QG Typ | 95 nC |
| QGD Typ | 31 nC |
| RDS(on) Typ at VGS=4.5V | 0.68 mOhm |
| Rds(on) Max at VGS=10V | 0.59 mOhms |
| Rds(on) Max at VGS=4.5V | 0.82 mOhms |
| VDS | 25 V |
| VGS | 20 V |
| VGSTH Typ | 1.5 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Modellreihe
Serie: CSD16570Q5B (2)
- CSD16570Q5B CSD16570Q5BT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor