Datasheet International Rectifier IRFR7740TRPbF — Datenblatt

StrongIRFETTM IRFR7740PbF IRFU7740PbF
Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters HEXFET® Power MOSFET D VDSS RDS(on) typ. 75V 6.0m 7.2m 87A G S max ID D Benefits Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Lead-free, RoHS compliant G Gate Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tube 75 S G D-Pak IRFR7740PbF G S D I-Pak IRFU7740PbF D Drain S Source Base part number IRFR7740PbF IRFU7740PbF Package Type D-Pak I-Pak Orderable Part Number IRFR7740PbF IRFR7740TRPbF IRFU7740PbF RDS(on), Drain-to -Source On Resistance (m ) 20 ID = 52A 15 100 80
ID, Drain Current (A)
20 60 10 T J = 125°C 40 5 T J = 25°C 0 0 5 10 15 20 0 25 50 75 100 125 150 175
VGS, Gate -to -Source Voltage (V) T C , Case Temperature (°C) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2014 International Rectifier Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 5, 2014 Absolute Maximum Rating Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current Repetitive Avalanche Energy EAR Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA Junction-to-Ambient RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS IGSS RG Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. 75 ­­­ ­­­ ­­­ 2.1 ­­­ ­­­ ­­­ ­­­ ­­­ Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C IRFR/U7740PbF
Max. 87 62 330 140 0.95 ± 20 -55 to + 175 300 Max. 160 242 See Fig 15, 16, 23a, 23b Typ. ­­­ ­­­ ­­­ Max. 1.05 50 110 Units mJ A mJ Units °C/W Units A W W/°C V °C Typ. Max. Units Conditions ­­­ ­­­ V VGS = …