Datasheet PSMN4R8-100BSE - NXP MOSFET, N-CH, 100 V, 120 A, D2PAK — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N-CH, 100 V, 120 A, D2PAK

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Docket:
PSMN4R8-100BSE
4 October 2012
N-channel 100 V 4.8 m standard level MOSFET in D2PAK
Objective data sheet
1.

Product profile

Specifications:

• Continuous Drain Current Id: 120 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 3
• On Resistance Rds(on): 0.0041 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 405 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• RoHS: Y-Ex

Andere Namen:

PSMN4R8100BSE, PSMN4R8 100BSE