Datasheet BUK964R2-60E - NXP MOSFET, N-CH, 60 V, 100 A, D2PAK — Datenblatt
Part Number: BUK964R2-60E
Detaillierte Beschreibung
Manufacturer: NXP
Description: MOSFET, N-CH, 60 V, 100 A, D2PAK
Docket:
BUK964R2-60E
13 July 2012
N-channel TrenchMOS logic level FET
Product data sheet
1.
Product profile
Specifications:
- Continuous Drain Current Id: 100 A
- Drain Source Voltage Vds: 60 V
- MSL: MSL 1 - Unlimited
- Number of Pins: 3
- On Resistance Rds(on): 3460µ Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation: 263 W
- Rds(on) Test Voltage Vgs: 5 V
- Threshold Voltage Vgs Typ: 1.7 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- RoHS: Y-Ex
- SVHC: No SVHC (18-Jun-2012)
Andere Namen:
BUK964R260E, BUK964R2 60E